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808nm 4.5W CW VCSEL Laser Diode
  • 808nm 4.5W CW VCSEL Laser Diode

808nm 4.5W CW VCSEL Laser Diode

    Features:

    •808nm Multimode VCSEL

    •High Efficiency (WPE), >35% @50C

    •Oxide Isolation Technology

    •Modulation bandwidth >1Gbps


Applications:


•3D Imaging

•Gesture Recognition

•Laser Illumincation

•Medical applications

•Broadband acesss nework

•Pump


Specifications:


I. Absolute Maximum Ratings

ParameterRating
Storage Temperature-40 to +85°C
Case Operating Temperature0 to 60°C
Relative Humidity5% to 90%
Reverse Power Supply Voltage5V
Maximum continuous forward current6 A
ESD Exposure (Human Body Model)1KV'
VCSEL ParametersTest ConditionSymbolMin.Typ.MaxUnitsNotes
Optical Power OutputIF=4.5APO
44.5W2
Threshold Current
I TH
800
mA
Slope EfficiencyPo =4.5Wŋ
1.1
mW /mA3
Wall Plug EfficiencyIF=5.0A

40
%
Emission AreaIF=5.0A

1100X1100
um
Peak WavelengthIF=5.0AλP
808
nm
Laser Forward VoltageIF=5.0AVF
-
V
Series ResistanceIF=5.0ARs
0. 16
Ohms
Beam AngleIF=5.0A

20
Degrees

II. Electro-Optical Characteristics (Top 25 deg C unless otherwise stated)


 Notes:


1. Reliability is a function of temperature.
2. For the purpose of these tests, IF is DC current.
3. Slope efficiency is defined as APp/AI,.


 III. Environmental Specifications

ParameterSymbolMinTypMaxUnitsRef.
Case Operating TemperatureTop0
60°C
Storage TemperatureTsto-40
85°C
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