670nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
670nm 400μm Red VCSEL Diode
Features
670nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Application
Sensor
Lidar
Indication
Medical applications
Short distance datacom
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -25 to 60 | ℃ |
| Storage Temp | Tsto | -40 to 85 | ℃ |
| Reflow Soldering Temperature | Tsdr | 180℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 25 | mA |
| ESD exposure (Human body) model | ESD | 2K | V |
Optical-electrical characteristics @25℃, CW mode
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Optical Power Output | Po | IF =11.5 mA | 400 | 450 | uW | |
| Threshold Current | Ith | 0.01 | mA | |||
| Forward Current | IF | 11.5 | mA | |||
| Slope Efficiency | η | Po =400 uW | mW/mA | |||
| Power Conversion Efficiency | PCE | IF =11.5 mA | % | |||
| Peak Wavelength | λP | IF =11.5 mA | 660 | 670 | 680 | nm |
| Laser Forward Voltage | VF | IF =11.5 mA | 2.15 | V | ||
| Series Resistance | RS | IF =11.5 mA | 42 | Ω | ||
| Emission area | - | 20 | um | |||
| Beam Angle (1/e^2) | θ | IF =11.5 mA | 36 | Degree | ||
| Beam Angle FWHM | 30 | Degree | ||||
| Wavelength shift | ∂λP/∂T | IF =11.5 mA | 0.07 | nm/°C | ||
| Soldering Temperature | - | Cu/Ag | 180(10s) | °C | ||
| - | FeNi Alloy | 260(10s) | °C | |||
| Substrate | Cu/Ag, FeNi Alloy | |||||
