680nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
680nm 5mW Red VCSEL Diode
Features
680nm single wavelength
Low wavelength drift
Oxide isolation technology
Narrow linewidth
Easy to collimate
Application
Sensing i.e. Proximity
Consumer electronics
Pulse Oximetry
Medical applications
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 4 | V |
| Maximum Continuous Current | Imax | 12 | mA |
| ESD exposure (Human body) model | ESD | 2-4K(Class 2) | V |
Optical-electrical characteristics @25℃, CW mode
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Optical Power Output | Po | IF =10 mA | 5 | mW | ||
| Threshold Current | Ith | 2.6 | mA | |||
| Forward Current | IF | 10 | mA | |||
| Slope Efficiency | η | 0.7 | W/A | |||
| Peak Wavelength | λP | Po=5mW | 670 | 680 | 690 | nm |
| Laser Forward Voltage | VF | IF=10mA | 2.5 | V | ||
| Emission area | - | 22 | um | |||
| Beam Angle (1/e^2) | θ | IF =10 mA | 22 | Degree | ||
| Wavelength shift | ∂λP/∂T | IF =10 mA | 0.045 | nm/°C | ||
| Soldering Temperature | - | AlN FeNi Alloy | 260(10s) | °C | ||
| - | Cu/Ag | 180(10s) | °C | |||
| Substrate | AlN, CuAg, FeNi Alloy | |||||
