Single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
808nm 4W VCSEL Laser Diode
Features:
Single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical applications
Proximity sensors
Military application
Absolute maximum ratings:
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 5 | mA |
| ESD exposure (Human body) model | ESD | 2K | V |
II.Optical-electrical characteristics @25℃ (Pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
Optical Power | Po | IF=4.5A | - | 4 | - | W |
| Forward Current | - | - | - | 4.5 | - | A |
Threshold Current | ITH | IF=4.5A | - | 1.01 | - | A |
| Power Conversion Efficiency | η | IF=4.5A | - | 39 | 45 | % |
| Slope Efficiency | - | IF=4.5A | - | 1.13 | - | W/A |
| Peak Wavelength | - | Po=4W | 800 | 808 | 815 | nm |
| Laser Forward Voltage | VF | IF=4.5A | - | 2.2 | - | V |
| Beam Angle (FW1/e^2) | - | IF=4.5A | - | 25 | - | Degrees |
| Wavelength Temp. Drift | - | IF=4.5A | - | 0.07 | - | nm/℃ |
| Emission area | - | - | - | 846x811 | - | um |
| Soldering Temperature | - | - | - | - | 260(10s) | ℃ |
| Substrate | AlN | |||||
