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850nm 200W VCSEL Diode
  • 850nm 200W VCSEL Diode

850nm 200W VCSEL Diode

    850nm single wavelength

    Low wavelength drift

    Circular spot

    SMD package

    High Reliability

    Easy to collimate

850nm 200W VCSEL Diode


Features

850nm single wavelength

Low wavelength drift

Circular spot

SMD package

High Reliability

Easy to collimate


Applications

Scanning lidars

Pump source of solid-state laser

Laser machining

3D sensors

Cosmetics


Absolute Maximum Ratings

ParameterSymbolRatingUnit
Case Operating TempTop-40 to 85
Storage TempTsto-40 to 105
Reflow Soldering TemperatureTsdr260℃(10s)
Reverse VoltageVr22V
Maximum Continuous CurrentImax55A
ESD exposure (Human body) modelImax2KV


Optical-electrical characteristics @25℃, pulsewidth100ms, Duty Cycle10%

VCSEL ParametersSymbolConditionsMin.Typ.Max.Units
Optical Power OutputPoIF =36A
200
W
Threshold CurrentIth-
5
A
Forward Current--
36
A
Slope Efficiency--
5.5
W/A
Power Conversion EfficiencyηIF =36A
28
%
Peak WavelengthλPPo=200W840850
860nm
Laser Forward VoltageVFIF =36A
19
V
Series ResistanceRSIF =36A
0.1

Emission area--
13X23
mm
Beam Angle (1/e^2)θIF =36A
25
Degrees
Beam Angle FWHMθIF =36A
-
Degrees
Duty cycle-
-
10
%
Illuminance area-@13.5mm
1.4X3.2
cm2
Energy density-1Hz, IF =36A
5.19
J/cm2
Wavelength shift∂λP/∂TIF =36A

0.07nm/°C
Soldering Temperature--

260(10s)°C
SubstrateCu


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