850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
850nm 2W VCSEL Laser Diode
Features:
850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensors
Military applications
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -20 to 85 | ℃ |
Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(<5s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 3.5 | A |
| ESD exposure (Human body) model | ESD | 1K | V |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Optical Power | IF=2.7A | Po | W | 2.0 | 2.2 | 2.5 |
| Threshold Current | - | Ith | A | 0.35 | 0.40 | 0.45 |
| Forward Current | - | IF | A | 2.7 | ||
| Power conversion efficiency | IF=2.7A | η | % | 36 | ||
| Slope efficiency | Po=2.2 W | - | W/A | 0.96 | ||
| Die Size | um | 960×950 | ||||
| Peak Wavelength | IF=2.7A | - | nm | 840 | 850 | 860 |
| Laser Forward Voltage | IF=2.7A | Vf | V | 2.15 | 2.25 | 2.35 |
| Series Resistance | IF=2.7A | R | Ω | 0.8 | 0.83 | 0.87 |
| Beam Angle | IF=2.7A | - | Degrees | 20 | ||
| Wavelength Temp. drift | IF=2.7A | - | nm/℃ | 0.07 | ||
| Soldering Temperature | - | - | ℃ | - | 260(5s) | |
| Substrate | AlN | |||||
