850nm Multimode VCSEL
Good thermal conduction
Oxide isolation technology
Short rise time
High reliability
Easy to collimate
Individually operating
850nm 50W Pulsed VCSEL Laser Diode
Features
850nm Multimode VCSEL
Good thermal conduction
Oxide isolation technology
Short rise time
High reliability
Easy to collimate
Individually operating
Applications
Multichannel Lidars
Range finder sensors
Laser curtain
3D detection
Proximity sensors
Military applications
Absolute maximum ratings
| Parameter | Rating |
| Storage Temperature | -40 to 105℃ |
| Case Operating Temperature | -40 to 80℃ |
Reflow Soldering Temperature | 260℃(<5s) |
Reverse Power Supply Voltag | 5V |
Maximum Forward Pulse Current | 140A(Duty cycle 0.1% max.) |
| ESD Exposure(Human Body Model) | 1000V |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Pulse Optical Power | IF=120A | Po | W | 40 | 50 | 52 |
| Threshold Current | - | Ith | A | 0.1 | ||
| Forward Pulse Current | - | - | A | 120 | ||
| Emission Area | - | - | um | 370*371 | ||
| Peak Wavelength | Po=50W | - | nm | 840 | 850 | 860 |
| Pulse Forward Voltage | IF=120A | Vf | V | 36 | 38 | 40 |
| Series Resistance | IF=120A | R | Ω | 0.30 | 0.32 | 0.33 |
| Beam Angle | IF=120A | - | Degrees | 20 | ||
| Wavelength Temp. drift | IF=120A | - | nm/℃ | 0.07 | ||
| Rise Time | Tr | ns | 2 | |||
| Soldering Temperature | - | ℃ | - | 260(10s) | ||
| Duty Cycle | - | - | % | - | 0.1 | |
| Substrate | Cu/Ag | |||||
