680nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
680nm 50mW Red VCSEL Diode
Features
680nm single wavelength
Low wavelength drift
Oxide isolation technology
Narrow linewidth
Easy to collimate
Application
Sensing i.e. Proximity
Consumer electronics
Pulse Oximetry
Medical applications
Absolute maximum rating
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | - |
| Reverse Voltage | Vr | 4 | V |
| Maximum Pulsed Current | Imax | 170 | mA |
| ESD exposure (Human body) model | ESD | 2-4k (Class 2) | V |
| ESD exposure (Machine) Model | ESD | 200-400 (Class B) | V |
Optical-electrical characteristics @25℃, CW mode
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power Output (Pulse) | Po | IF=115mA | 50 | mW | ||
| Optical Power Output (CW) | Po | IF=115mA | 49.5 | mW | ||
| Threshold Current | Ith | - | 26 | mA | ||
| Forward Current | - | - | 115 | mA | ||
| Slope Efficiency | - | - | 0.56 | W/A | ||
| Peak Wavelength | λP | Po=50mW | 670 | 680 | 690 | nm |
| Laser Forward Voltage | VF | IF=115mA | 2.65 | V | ||
| Emission diameter | - | - | 224X210 | um | ||
| Beam Angle(1/e^2) | θ | IF=115mA | 23 | degrees | ||
| Wavelength Temp. Drift | ∂λP/∂T | IF=115mA | 0.045 | nm/℃ | ||
| Substrate | AlN, CuAg, FeNi Alloy | |||||
