Features：
808nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
808nm 300mW VCSEL Diode
Features：
808nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Application：
3D sensors
Lidars
IR illuminations
Medical applications
Solid-state pump source
Absolute Maximum Ratings:
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Pulsed Current | Imax | 0.75 | A |
| ESD exposure (Human body) model | ESD | 2K | V |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle):
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power Output | Po | IF=0.5A | 300 | 350 | mW | |
| Threshold Current | Ith | - | 0.15 | A | ||
| Forward Current | - | - | 0.5 | A | ||
| Slope Efficiency | - | - | 0.8 | mW/mA | ||
| Power Conversion Efficiency | η | IF=0.5A | 29 | % | ||
| Peak Wavelength | λP | Po=300mW | 800 | 808 | 816 | nm |
| Laser Forward Voltage | VF | IF=0.5A | 2.51 | V | ||
| Series Resistance | RS | IF=0.5A | 4.8 | Ω | ||
| Emission area | - | - | 294*278 | um | ||
| Beam Angle (1/e^2) | θ | IF=0.5A | 25 | Degrees | ||
| Beam Angle FWHM | θ | IF=0.5A | ||||
| Wavelength Temp. Drift | ∂λP/∂T | IF=0.5A | 0.0 | nm/℃ | ||
| Soldering Temperature | - | AlN FeNi Alloy | 260(10s) | ℃ | ||
| - | Cu/Ag | 180(10s) | ℃ | |||
| Substrate | AlN, Cu/Ag, FeNi Alloy | |||||
