808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Modulation and width >2GHz
808nm 60mW VCSEL Laser Diode
Features:
808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Modulation and width >2GHz
Application:
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensor
Range Finder Sensor
Absolute Maximum Ratings：
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 70 | ℃ |
| Storage Temp | Tsto | -40 to 85 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 4 | V |
| Maximum Pulsed Current | Imax | 150 | mA |
| ESD exposure (Human body) model | ESD | 2K | V |
Optical-electrical characteristics @25℃, CW mode
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power Output | Po | IF=65mA | - | 60 | - | mW |
| Threshold Current | Ith | - | - | 7.5 | - | mA |
| Forward Current | - | - | - | 65 | - | mA |
| Slope Efficiency | - | - | - | 1.04 | - | mW/mA |
| Power Conversion Efficiency | η | - | - | 37 | - | % |
| Peak Wavelength | λP | Po=60mW | 800 | 808 | 816 | nm |
| Laser Forward Voltage | VF | IF=65mA | - | 2.4 | - | V |
| Series Resistance | RS | IF=65mA | - | 9 | - | Ω |
| Emission area | - | - | - | 48x48 | - | μm2 |
| Beam Angle (1/e^2) | θ | IF=65mA | - | 25 | - | degrees |
| Beam Angle FWHM | θ | IF=65mA | - | 20 | - | degrees |
| Wavelength Temp. Drift | ∂λP/∂T | IF=65mA | - | 0.07 | - | nm/℃ |
| Soldering Temperature | - | AlN , FeNi Alloy | - | - | 260(10s) | ℃ |
| - | Cu/Ag | - | - | 180(10s) | ℃ | |
| Substrate | AlN, Cu/Ag, FeNi Alloy | |||||
