850nm wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
850nm 6W VCSEL Diode
Features
850nm wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications
3D sensors
Lidars
IR illuminations
Medical applications
Machining vision
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Pulsed Current | Imax | 10 | A |
| ESD exposure (Human body model) | ESD | Class 3 (8-10)K | V |
| ESD exposure (Mechanis model) | ESD | Class C (800-1000) | V |
Optical-electrical characteristics @25℃, CW mode
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power Output | Po | IF=9.5A | - | 6 | - | W |
| Threshold Current | Ith | - | - | 1 | - | A |
| Forward Current | - | - | - | 9.5 | - | A |
| Slope Efficiency | - | - | - | 0.6 | - | W/A |
Power Conversion Efficienc | η | - | - | 24 | - | % |
| Peak Wavelength | - | Po=6W | 840 | 850 | 860 | nm |
| Laser Forward Voltage | VF | IF=9.5A | - | 2.7 | - | V |
| Series Resistance | R | IF=9.5A | - | 0.1 | - | Ω |
| Emission area | - | - | - | 1250*1260 | - | um |
| Beam Angle (1/e^2) | - | IF=9.5A | - | 25 | - | Degrees |
| Beam Angle FWHM | - | - | - | 20 | - | |
| Wavelength Temp. Drift | - | IF=9.5A | - | 0.07 | - | nm/℃ |
| Soldering Temperature | - | - | - | - | 260(10s) | ℃ |
| Substrate | AlN, Cu | |||||
