850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
850nm 350mW VCSEL Laser Diode
Features:
850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensors
Military applications
Absolute Maximum Ratings
| Parameter | Rating |
| Storage Temperature | -40 to 125°C |
| Ambient Operating Temperature | -40 to 85°C |
| Relative Humidity | 10% to 85% |
| Reverse Power Supply Voltage | 5V |
| Maximum continuous forward current | 1A |
| ESD Exposure (Human Body Model) | 1KV1 |
Optical-electrical characteristics @25℃
| VCSEL Parameters | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Optical Power Output | Po | IF =750mA | 350 | mW | ||
| Threshold Current | ITH | - | 82 | mA | ||
| Slope Efficiency | η | Po =350mW | 0.52 | mW/mA | ||
| Power Conversion Efficiency | PCE | IF=750mA | 22 | % | ||
| Peak Wavelength | λP | IF=750mA | 840 | 850 | 860 | nm |
| Laser Forward Voltage | VF | IF=750mA | 2.2 | V | ||
| Series Resistance | RS | IF=750mA | 2.93 | Ohm | ||
| Beam Angle | θ | IF=750mA | 20 | Degrees | ||
| Wavelength shift | ∂λP/∂T | IF=750mA | 0.07 | nm/°C | ||
| Soldering Temperature | - | - | 260(5s) | ℃ | ||
| Substrate | AlN(2016/3535); Cu/Ag(TO18/TO46) | |||||
