850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
850nm 6mW VCSEL laser diode 2016 packaging
Features:
850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
Poximity sensors
Scanning Lidars
Laser pointers
Range finder sensors
Particulate measurement
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Relative Humidity | RH | 10% to 85% | |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 10 | mA |
| ESD exposure (Human body) model | ESD | 1k | V |
Optical-electrical characteristics @25℃
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power | Po | IF=8.3mA | 6 | mW | ||
| Threshold Current | ITH | - | 0.51 | mA | ||
| Power Conversion Efficiency | η | IF=8.3mA | 29.8 | % | ||
| Slope Efficiency | - | Po=6mW | 0.8 | mW/mA | ||
| Die Size | - | - | 204x228 | um | ||
| Peak Wavelength | - | IF=8.3mA | 840 | 850 | 860 | nm |
| Laser Forward Voltage | VF | IF=8.3mA | 2.4 | 2.5 | V | |
| Series Resistance | R | IF=8.3mA | 102 | Ω | ||
| Beam Angle | - | IF=8.3mA | 25 | Degrees | ||
| Wavelength Temp. Drift | - | IF=8.3mA | 0.07 | nm/℃ | ||
| Soldering Temperature | - | - | - | 260(5s) | ℃ | |
| Substrate | Cu/Ag | |||||
