850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
850nm 500mW VCSEL Laser Diode
Features:
850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensors
Military applications
Absolute Maximum Ratings
| Parameter | Rating |
| Storage Temperature | -40 to 105°C |
| Ambient Operating Temperature | -40 to 85°C |
| Reflow Soldering Temperature | 260℃(<5s) |
| Reverse Power Supply Voltage | 5V |
| Maximum continuous forward current | 1A |
| ESD Exposure (Human Body Model) | 1KV |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Optical Power | IF=670mA | Po | mW | 500 | ||
| Threshold Current | - | Ith | mA | 70 | ||
| Forward Current | - | IF | mA | 670 | ||
| Power conversion efficiency | IF=670mA | η | % | 35 | 39 | |
| Slope efficiency | Po=500mW | mW/mA | 0.71 | |||
| Peak Wavelength | IF=670mA | nm | 840 | 850 | 860 | |
| Laser Forward Voltage | IF=670mA | Vf | V | 2.2 | ||
| Series Resistance | IF=670mA | R | Ω | 0.98 | ||
| Original Beam Angle | IF=670mA | Degrees | 26 | |||
| Wavelength Temp. drift | IF=670mA | nm/℃ | 0.07 | |||
| Soldering Temperature | - | ℃ | 260(5s) | |||
| Substrate | Cu/Ag | |||||
