850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
850nm 4W VCSEL Laser Diode
Features:
850nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensors
Military applications
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -20 to 85 | ℃ |
Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(<5s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 10 | A |
| ESD exposure (Human body) model | ESD | 1K | V |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Optical Power | IF=6.3A | Po | W | 4 | 5 | |
| Threshold Current | - | Ith | A | 0.9 | ||
| Forward Current | - | IF | A | 6.3 | 9 | |
| Power conversion efficiency | IF=6.3A | η | % | 27 | 29 | 31 |
| Slope efficiency | Po=4 W | - | W/A | 0.72 | ||
| Emission Area | um | 1250×1260 | ||||
| Peak Wavelength | IF=6.3A | - | nm | 840 | 850 | 860 |
| Laser Forward Voltage | IF=6.3A | Vf | V | 2.0 | 2.2 | 2.4 |
| Series Resistance | IF=6.3A | R | Ω | 0.32 | 0.35 | 0.38 |
| Beam Angle | IF=6.3A | - | Degrees | 20 | 25 | |
| Wavelength Temp. drift | IF=6.3A | - | nm/℃ | 0.07 | ||
| Soldering Temperature | - | - | ℃ | - | 260(5s) | |
| Substrate | AlN(7070) / Cu/Ag(T-mount) | |||||
