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940nm 10W Pulsed VCSEL Laser Diode
  • 940nm 10W Pulsed VCSEL Laser Diode
  • 940nm 10W Pulsed VCSEL Laser Diode

940nm 10W Pulsed VCSEL Laser Diode

    Multimode VCSEL

    Low wavelength drift

    Oxide isolation technology

    Low threshold current

    High reliability

    Integrated photodiode


940nm 10W Pulsed VCSEL Laser Diode(TO46 Packaging)

Features

Multimode VCSEL

Low wavelength drift

Oxide isolation technology

Low threshold current

High reliability

Integrated photodiode


Applications

3D sensors

Lidars

Temperature sensors

Medical applications

Proximity sensors

Military applications


Ⅰ. Absolute maximum ratings

ParameterSymbolRatingUnit
Case Operating TempTop-40 to 85
Storage TempTsto-40 to 105
Reflow Soldering TempertureTsdr260℃(<5s)
Reverse VoltageVR5V
Maximum Continuous CurrentImax80A
ESD exposure (Human body) modelESD1kV


Ⅱ. Optical-electrical characteristics(Top25℃, Pulsewidth 7.2ns@ 11.68kHz)

ParametersConditionsSymbolUnitMin.Typ.Max.
Optical PowerIF=73APoW-10-
Threshold Current-IthA-0.05-
Forward Pulse Current-IFA
73
Emission Area        -  - um
  215x226
Peak WavelengthPo=10w-um930940950
Laser Forward VoltageIF=73AVfV
30-
Series ResistanceIF=73ARΩ-0.41-
Beam AngleIF=73A-Degrees-20-
Wavelength Temp. driftIF=73A-nm/℃-0.07-
Rise Time-Trns
2.4
Soldering Temperature----260(5s)
Duty Cycle-
%


SubstrateCu/Ag

III. Enviromental Specifications


ParameterSymbolMin.Typ.Max.
UnitsRef.
Case Operating TempTop-402585-
Storage TempTsto-4025105-


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