Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Integrated photodiode
940nm 50W Pulsed VCSEL Laser Diode(TO46 Packaging or 2016 Packaging)
Features
Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Integrated photodiode
Applications
3D sensors
Lidars
Temperature sensors
Medical applications
Proximity sensors
Military applications
Ⅰ. Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperture | Tsdr | 260℃(<5s) | ℃ |
| Reverse Voltage | VR | 5 | V |
| Maximum Continuous Current | Imax | 180 | A |
| ESD exposure (Human body) model | ESD | 1k | V |
Ⅱ. Optical-electrical characteristics(Top25℃, Pulsewidth 6.4ns@ 11.68kHz)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Optical Power | IF=160A | Po | W | 40 | 50 | 52 |
| Threshold Current | - | Ith | A | - | 0.1 | - |
| Forward Pulse Current | - | IF | A | 160 | ||
| Emission Area | - | - | um | 370x271 | ||
| Peak Wavelength | Po=50W | - | um | 930 | 940 | 950 |
| Laser Forward Voltage | IF=160A | Vf | V | 38 | 40 | 42 |
| Series Resistance | IF=160A | R | Ω | 0.24 | 0.25 | 0.26 |
| Beam Angle | IF=160A | - | Degrees | - | 20 | - |
| Wavelength Temp. drift | IF=160A | - | nm/℃ | - | 0.07 | - |
| Rise Time | - | Tr | ns | 2.4 | ||
| Soldering Temperature | - | - | ℃ | - | - | 260(5s) |
| Duty Cycle | - | % | 0.1 | |||
| Substrate | Cu/Ag | |||||
III. Enviromental Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Units | Ref. |
| Case Operating Temp | Top | -40 | 25 | 85 | ℃ | - |
| Storage Temp | Tsto | -40 | 25 | 105 | ℃ | - |
