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Si pin Photodiode 400-1100nm Bandwidth 700nm
  • Si pin Photodiode 400-1100nm Bandwidth 700nm

Si pin Photodiode 400-1100nm Bandwidth 700nm

    High sensitivity

    Low dark current noise

    High reliability

    Coated bandpass filter

    High speed

    Environment compatible


Si Photodiode Chip 4011 with 3030 package

Features:

High sensitivity

Low dark current noise

High reliability

Coated bandpass filter

High speed

Environment compatible


Applications:

Sensing i.e. proximity

Laser curtain

Lidars

Medical applications

Telecommunications

Military applications


I.Absolute Maximum Ratings


ParameterRating
Storage Temperature-40 to 105°C
Case Operating Temperature-20 to 85°C
Relative Humidity10%  to 85%
Reverse Breakdown voltage33V(min.)
Maximum Reverse dark current5nA

II.Electro-Optical Characteristics (Top 25℃)

ParametersConditionsSymbolUnitMin.Typ.

Max.

Forward VoltageIF=10mA,Ee=0mW/cm2VFV

1.2
Reverse Breakdown VoltageIBR=10uA,Ee=0mW/cm2VBRV33

Reverse Dark CurrentVR=10V, Ee=0mW/cm2IDnA

5
ResponsivityVR=3V, @940nmILA/W
0.6
Peak Sensing WavelengthVR=3Vλpnm
940
Total CapacitanceVR=5V, F=1MHzCJpF
1.1


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