High sensitivity
Low dark current noise
High reliability
Coated bandpass filter
High speed
Environment compatible
Si Photodiode Chip with Bandpass filter PD8797-B100-0100Si-2016
Features
High sensitivity
Low dark current noise
High reliability
Coated bandpass filter
High speed
Environment compatible
Applications:
Sensing i.e. proximity
Laser curtain
Lidars
Medical applications
Telecommunications
Temperature measurement
I.Absolute Maximum Ratings
| Parameter | Rating |
| Storage Temperature | -40 to 105°C |
| Case Operating Temperature | -20 to 85°C |
| Relative Humidity | 10% to 85% |
| Reverse Breakdown voltage | 33V(min.) |
| Maximum Reverse dark current | 5nA |
II.Electro-Optical Characteristics (Top 25℃)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Forward Voltage | IF=10mA，Ee=0mW/cm2 | VF | V | 1.2 | ||
| Reverse Breakdown Voltage | IBR=10uA，Ee=0mW/cm2 | VBR | V | 33 | ||
| Reverse Dark Current | VR=10V, Ee=0mW/cm2 | ID | nA | 5 | ||
| Responsivity | VR=3V, @940nm | IL | A/W | 0.6 | ||
| Peak Sensing Wavelength | VR=3V | λp | nm | 940 | ||
| Total Capacitance | VR=5V, F=1MHz | CJ | pF | 1.1 |
