Single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
808nm 2W VCSEL Laser Diode
Features:
Single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications:
3D sensors
Lidars
IR illuminations
Medical applications
Proximity sensors
Military application
Absolute maximum ratings:
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 3 | mA |
| ESD exposure (Human body) model | ESD | 2K | V |
II.Optical-electrical characteristics @25℃ (Pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
Optical Power | Po | IF=2.6A | - | 2 | - | W |
| Forward Current | - | - | - | 2.6 | - | A |
Threshold Current | ITH | IF=2.6A | - | 0.6 | - | A |
| Power Conversion Efficiency | η | IF=2.6A | - | 37 | 45 | % |
| Slope Efficiency | - | IF=2.6A | - | - | - | W/A |
| Peak Wavelength | - | Po=2W | 800 | 808 | 815 | nm |
| Laser Forward Voltage | VF | IF=2.6A | - | 2.07 | - | V |
| Beam Angle (FW1/e^2) | - | IF=2.6A | - | 30 | - | Degrees |
| differential resistance | Ω | IF=2.6A | - | 0.16 | - | R |
| Wavelength Temp. Drift | - | - | - | 0.07 | - | nm/℃ |
| Soldering Temperature | - | - | - | - | 260(10s) | ℃ |
| Substrate | AlN | |||||
