808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
808nm 1.5W VCSEL Diode
Features
808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Application
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensor
Range Finder Sensor
Solid state pump source
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Pulsed Current | Imax | 6 | A |
| ESD exposure (Human body) model | ESD | 8k-10k (Class 3) | V |
| ESD exposure (Machine) Model | ESD | 800-1000 (Class C) | V |
Optical-electrical characteristics @25℃, CW mode
| VCSEL Parameters | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Optical Power Output | Po | IF =2.2A | - | 1.5 | - | W |
| Threshold Current | Ith | - | - | 0.75 | - | A |
| Forward Current | IF | - | - | 2.2 | - | A |
| Slope Efficiency | - | - | - | 1.03 | - | W/A |
| Power Conversion Efficiency | η | - | 30 | - | % | |
| Laser Forward Voltage | VF | IF =2.2A | - | 2.2 | - | V |
| Series Resistance | RS | IF =2.2A | 0.18 | |||
| Emission area | 684x634 | μm2 | ||||
| Beam Angle (1/e^2) | θ | IF =2.2A | 25 | Degrees | ||
| Beam Angle FWHM | θ | IF =2.2A | 20 | Degrees | ||
| Peak Wavelength | λP | Po=140W | 800 | 808 | 816 | nm |
| Wavelength shift | ∂λP/∂T | IF =2.2A | 0.07 | nm/°C | ||
| Pulse Mode (0.1ms, 100Hz, Duty cycle 1%) | ||||||
| Optical Peak Power | Po | IF =5.5A | 4 | W | ||
| Forward Current | IF | 0.75 | A | |||
| Slope Efficiency | 1.03 | W/A | ||||
| Laser Forward Voltage | VF | IF =5.5A | 3.14 | V | ||
| Power Conversion Efficiency | η | IF =5.5A | 23 | % | ||
| Series Resistance | RS | IF =5.5A | 0.22 | |||
| Soldering Temperature | AIN | 260 (10s) | ℃ | |||
| Substrate | AlN | |||||
