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808nm 200W VCSEL Diode
  • 808nm 200W VCSEL Diode

808nm 200W VCSEL Diode

    808nm single wavelength

    Low wavelength drift

    Circular spot

    SMD package

    High Reliability

    Easy to collimate




808nm 200W VCSEL Diode


Features

808nm single wavelength

Low wavelength drift

Circular spot

SMD package

High Reliability

Easy to collimate


Applications

Scanning lidars

Pump source of solid-state laser

Laser machining

3D sensors

Cosmetics i.e. Hair removal


Absolute Maximum Ratings

ParameterSymbolRatingUnit
Case Operating TempTop-40 to 85
Storage TempTsto-40 to 105
Reflow Soldering TemperatureTsdr180℃(10s)
Reverse VoltageVr10V
Maximum Continuous CurrentImax24A
ESD exposure (Human body) modelESD2KV


Optical-electrical characteristics @25℃, pulsewidth 100ms, dutycycle 10%

ParametersSymbolConditionsMin.Typ.Max.Unit
Optical PowerPoIF=19A
170
W
Threshold CurrentIth

5
A
Forward CurrentIF

19
A
Slope efficiency


1.01
W/A
Power conversion efficiencyηIF=19A
40.3
%
Peak WavelengthλPPo=170W800808816nm
Laser Forward VoltageVfIF=19A
2222.2V
Series ResistanceRsIF=19A
0.11
Ω
Emission area


31.47x14.58
mm
Beam Angle (1/e^2)θIF=19A
25
Degrees
Beam Angle(FWHM)θIF=19A


Degrees
Duty cycle


10
%
Illuminance area
@15mm
2.52
cm2
Energy density1Hz, IF =19A

6.74
J/cm2
2Hz, IF =18A

11.69
J/cm2
3Hz, IF =17A

16.59
J/cm2
4Hz, IF =15A

18.72
J/cm2
Wavelength shift∂λP/∂TIF =19A
0.07
nm/°C
Soldering Temperature


180(10s)
SubstrateCu


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