808nm single longitudinal mode
Low wavelength drift
Circular spot
Multiple package choices
High Reliability
Easy to collimate
808nm 100W VCSESL Diode
Features
808nm single longitudinal mode
Low wavelength drift
Circular spot
Multiple package choices
High Reliability
Easy to collimate
Applications
Lidars
Pump source of solid-state laser
Laser machining
3D sensors
Cosmetics i.e. Hair removal
Range finder sensors
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 180℃(10s) | ℃ |
| Reverse Voltage | Vr | 15 | V |
| Maximum Continuous Current | Imax | 30 | A |
| ESD exposure (Human body) model | ESD | 8k-10k (Class 3) | V |
| ESD exposure (Machine) model | ESD | 800-1000 (Class C) | V |
Optical-electrical characteristics @25℃ CW
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| CW Mode | ||||||
| Optical Power | Po | IF =21A | 90 | 100 | 110 | W |
| Threshold Current | Ith | 3.5 | A | |||
| Forward Current | IF | 21 | A | |||
| Slope efficiency | 5 | W/A | ||||
| Power conversion efficiency | η | IF =21A | 38 | % | ||
| Peak Wavelength | λP | Po=90W | 800 | 808 | 816 | nm |
| Laser Forward Voltage | Vf | IF =21A | 11 | V | ||
| Series Resistance | Rs | IF =21A | 0.14 | Ω | ||
| Emission area | 10.32×8.5 | mm | ||||
| Beam Angle (1/e^2) | θ | IF=21A | 25 | Degrees | ||
| Beam Angle(FWHM) | θ | IF=21A | 20 | Degrees | ||
| Wavelength shift | ∂λP/∂T | IF =11A | 0.07 | nm/°C | ||
| Pulse Mode (100ms, 1Hz, Duty cycle 10%) | ||||||
| Optical Peak Power | Po | IF =20.2A | 100 | 120 | W | |
| Forward Current | IF | 20.2 | A | |||
| Slope Efficiency | 6 | W/A | ||||
| Laser Forward Voltage | VF | IF =20.2A | 11.5 | V | ||
| Power Conversion Efficiency | η | IF =20.2A | 41 | 44 | % | |
| Series Resistance | RS | IF =20.2A | 0.11 | Ω | ||
| Soldering Temperature | 180 (10s) | ℃ | ||||
| Substrate | Cu | |||||
