Features:
940nm Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Integrated photodiode
Applications
3D sensors
Lidars
Temperature sensors
Medical applications
Proximity sensors
Military applications
Ⅰ. Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(<5s) | ℃ |
| Reverse Voltage | VR | 5 | V |
| Maximum Continuous Current | Imax | 3.5 | A |
| ESD exposure (Human body) model | ESD | 1k | V |
Ⅱ. Optical-electrical characteristics @25℃
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Laser diode | ||||||
| Optical Power | IF=2.5 A | Po | W | - | 2 | - |
| Threshold Current | - | - | A | - | 2.5 | - |
| Forward Current | η | % | 38 | 40 | 42 | |
| Power conversion efficiency | η | % | 38 | 40 | 42 | |
| Slope efficiency | - | - | W/A | - | 0.87 | - |
| Emission Area | - | - | um | - | 532×632 | - |
| Peak Wavelength | PO=2 W | - | nm | 930 | 940 | 950 |
| Laser Forward Voltage | IF=2.5 A | VF | V | - | 2.05 | 2.15 |
| Series Resistance | IF=2.5 A | R | Ω | - | 0.90 | 0.94 |
| Original Beam Angle | IF=2.5 A | - | Degrees | - | 20 | 25 |
| Wavelength Temp. drift | IF=2.5 A | - | nm/℃ | - | 0.07 | - |
| Photodiode | ||||||
| Forward Voltage | IF=10mA，Ee=0mW/cm2 | VF | V | 1.2 | ||
| Reverse Breakdown Voltage | IBR=10uA，Ee=0mW/cm2 | VBR | V | 33 | ||
| Reverse Dark Current | VR=10V, Ee=0mW/cm2 | ID | nA | 5 | ||
| Responsivity | VR=3V, @940nm | IL | A/W | 0.6 | ||
| Peak Sensing Wavelength | VR=3V | λp | nm | 940 | ||
| Total Capacitance | VR=5V, F=1MHz | CJ | pF | 1.1 | ||
| Active area | um | 265×265 | ||||
| Soldering Temperature | ℃ | 260(5s) | ||||
| Substrate | AlN | |||||
Ⅲ. LIV Graph and Relative spectral responsivity
