LP000E-B006-0042Si-0412 consists of two chips, one VCSEL and one photodiode chip, incorporated into in one 3528 package (P/Cu).
Multimode VCSEL
High sensitivity photodiodewith coated bandpass filter
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
LP000E-B006-0042Si-0412 consists of two chips, one VCSEL and one photodiode chip, incorporated into in one 3528 package (P/Cu).
Features
Multimode VCSEL
High sensitivity photodiodewith coated bandpass filter
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications
Proximity sensors
Lidars
Laser Curtain
Particulate matter sensors
Medical applications
Laser distance meter
Axial optical cables
Temperature measurement
I. Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(<5s) | ℃ |
| Reverse Voltage | VR | 5 | V |
| Maximum Continuous Current | Imax | 20 | mA |
| ESD exposure (Human body) model | ESD | 1k | V |
Ⅱ. Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Laser diode | ||||||
| Optical Power | IF=9.5mA | Po | mW | - | 6 | - |
| Threshold Current | - | Ith | mA | - | 1.2 | - |
| Forward Current | - | IF | mA | 9.5 | - | |
| Power conversion efficiency | IF=9.5mA | η | % | 27 | 29 | |
| Slope efficiency | IF=9.5mA | - | mW/mA | - | 0.69 | - |
| Peak Wavelength | IF=9.5mA | - | nm | 930 | 940 | 950 |
| Laser Forward Voltage | IF=9.5mA | VF | V | 2.0 | 2.34 | 2.5 |
| Series Resistance | IF=9.5mA | R | Ω | - | 68 | - |
| Original Beam Angle | IF=9.5mA | - | Degrees | - | 30 | - |
| Wavelength Temp. drift | IF=9.5mA | - | nm/℃ | - | 0.07 | - |
| Photodiode | ||||||
| Forward Voltage | IF=10mA，Ee=0mW/cm2 | VF | V | 1.2 | ||
| Reverse Breakdown Voltage | IBR=10uA，Ee=0mW/cm2 | VBR | V | 33 | ||
| Reverse Dark Current | VR=10V, Ee=0mW/cm2 | ID | nA | 5 | ||
| Responsivity | VR=3V, @940nm | IL | A/W | 0.6 | ||
| Peak Sensing Wavelength | VR=3V | λp | nm | 940 | ||
| Total Capacitance | VR=5V, F=1MHz | CJ | pF | 1.1 | ||
| Soldering Temperature | ℃ | 260(5s) | ||||
| Substrate | AlN | |||||
