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850-940nm 6mW Mixed Laser Chips
  • 850-940nm 6mW Mixed Laser Chips

850-940nm 6mW Mixed Laser Chips

    Consists of two VCSEL chips, one is 850nm 6mW and the other is 940nm 6mW, incorporated into in one 3528 package (P/Cu).

    850nm-940nm Multimode VCSEL

    Low wavelength drift

    Oxide isolation technology

    Low threshold current

    High reliability

    Easy to collimate


Consists of two VCSEL chips, one is 850nm 6mW and the other is 940nm 6mW, incorporated into in one 3528 package (P/Cu).

Features:

850nm-940nm Multimode VCSEL

Low wavelength drift

Oxide isolation technology

Low threshold current

High reliability

Easy to collimate


Applications:

Poximity sensors

Wristband pulse oximeter

Gas sensor

PM2.5/10 detector

Smoke detector

Steam sensor 


I. Absolute maximum ratings

ParameterSymbolRatingUnit
Case Operating TempTop-40 to 85
Storage TempTsto-40 to 105
Reflow Soldering TemperatureTsdr260℃(<5s)
Reverse VoltageVR5V
Maximum Continuous CurrentImax20mA
ESD exposure (Human body) modelESD1kV


Ⅱ. Optical-electrical characteristics @25℃

850nm 6mW (CW mode)

ParametersSymbolConditionsMin.Typ.Max.Unit
Optical PowerPoIF=8.3mA
6
mW
Threshold CurrentITH-
0.48
mA
Forward CurrentIF-
8.3
mA
Power Conversion EfficiencyηIF=8.3mA
3234%
Slope Efficiency-Po=6mW
0.69
mW/mA
Peak Wavelength-
IF=8.3mA840850860nm
Laser Forward VoltageVFIF=8.3mA
2.32.4V
Series ResistanceRIF=8.3mA
76
Ω
Beam Angle-IF=8.3mA
30
Degrees
Wavelength Temp. Drift-
IF=8.3mA
0.07
nm/℃
Soldering Temperature--
-260(5s)


940nm 6mW (pulsewidth 0.1ms, 1% duty cycle)

ParametersConditionsSymbolUnitMin.Typ.Max.
Optical PowerIF=9.5mAPomW-6-
Threshold Current-IthmA-1.2-
Forward Current-IFmA
9.5-
Power Conversion EfficiencyIF=9.5mAη%-2729
Slope efficiencyPO=6mW-mW/mA-0.69-
Peak WavelengthIF=9.5mA-nm930940950
Laser Forward VoltageIF=9.5mAVfV2.02.342.5
Series ResistanceIF=9.5mARΩ-68-
Beam AngleIF=9.5mA-Degrees-30-
Wavelength Temp. driftIF=9.5mA-nm/℃-0.07-
Soldering  Temperature----260(5s)

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