808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
808nm 20W VCSEL Diode
Features
808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Applications
3D sensors
Lidars
IR illuminations
Medical applications
Solid-state pump source
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 10 | V |
| Maximum Continuous Current | Imax | 6 | A |
| ESD exposure (Human body) model | ESD | 8-10k (Class 3) | V |
| ESD exposure (machine) model | ESD | 800-1000 (Class C) | V |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power | Po | IF=5.6A | 20 | 22 | W | |
| Threshold Current | Ith | 0.9 | A | |||
| Forward Current | IF | 5.2 | 5.6 | 6.0 | A | |
| Power conversion efficiency | η | 40 | 43 | % | ||
| Slope efficiency | 4.2 | W/A | ||||
| Peak Wavelength | λP | Po=20W | 800 | 808 | 816 | nm |
| Laser Forward Voltage | Vf | IF=5.6A | 8.8 | 9.4 | V | |
| Series Resistance | Rs | IF=5.6A | 0.33 | 0.39 | 0.45 | Ω |
| Emission area | 6.6×1.91 | mm | ||||
| Beam Angle (1/e^2) | θ | IF=5.6A | 25 | Degrees | ||
| Beam Angle(FWHM) | θ | IF=5.6A | 20 | Degrees | ||
| Wavelength Temp. drift | ∂λP/∂T | IF=5.6A | 0.07 | nm/℃ | ||
| Soldering Temperature | Cu | 260(10s) | ℃ | |||
| Substrate | Cu | |||||
