Single wavelength VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
808nm 10W VCSEL Diode T package
Features
Single wavelength VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications
3D sensors
Lidars
IR illuminations
Medical applications
Solid-state pump source
Absolute maximum ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 15 | A |
| ESD exposure (Human body) model | ESD | 2K | V |
Optical-electrical characteristics @25℃ (pulsewidth 0.1ms, 1% duty cycle)
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power | Po | IF=11.1A | 10 | W | ||
| Threshold Current | Ith | 1.8 | A | |||
| Forward Current | IF | 11.1 | A | |||
| Power conversion efficiency | η | IF=11.1A | 37 | % | ||
| Slope efficiency | Po=10W | 1.07 | W/A | |||
| Peak Wavelength | IF=11.1A | 800 | 808 | 815 | nm | |
| Laser Forward Voltage | Vf | IF=11.1A | 2.42 | V | ||
| Series Resistance | R | IF=11.1A | 0.06 | Ω | ||
| Emission area | 1170*1155 | um | ||||
| Beam Angle (1/e^2) | IF=11.1A | 25 | Degrees | |||
| Beam Angle(FWHM) | ||||||
| Wavelength Temp. drift | IF=11.1A | 0.07 | nm/℃ | |||
| Soldering Temperature | 260(10s) | ℃ | ||||
| Substrate | AlN, Cu | |||||
