808nm single wavelength
Low wavelength drift
Circular spot
SMD package
High Reliability
Easy to collimate
808nm 50W VCSESL Diode
Features
808nm single wavelength
Low wavelength drift
Circular spot
SMD package
High Reliability
Easy to collimate
Applications
Lidars
Pump source of solid-state laser
Laser machining
3D sensors
Cosmetics i.e. Hair removal
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 70 | ℃ |
| Storage Temp | Tsto | -40 to 85 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 10 | V |
| Maximum Continuous Current | Imax | 15 | A |
| ESD exposure (Human body) model | ESD | 2-4K | V |
Optical-electrical characteristics @25℃
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| CW Mode | ||||||
| Optical Power | Po | IF=10A | 40 | W | ||
| Threshold Current | Ith | 2 | A | |||
| Forward Current | IF | 10 | A | |||
| Slope efficiency | 5.0 | W/A | ||||
| Power conversion efficiency | η | IF=10A | 33 | % | ||
| Peak Wavelength | λP | Po=50W | 800 | 808 | 816 | nm |
| Laser Forward Voltage | Vf | IF=10A | 12 | V | ||
| Series Resistance | Rs | IF=10A | 0.3 | Ω | ||
| Emission area | 8.7×5.9 | mm | ||||
| Beam Angle (1/e^2) | θ | IF=10A | 25 | Degrees | ||
| Beam Angle(FWHM) | θ | IF=10A | Degrees | |||
| Pulse Mode (4us, 250Hz, Duty cycle 1%) | ||||||
| Optical Peak Power | Po | IF =50A | 118 | W | ||
| Forward Current | IF | 50 | A | |||
| Laser Forward Voltage | VF | IF =50A | 19 | V | ||
| Pulse Mode (1ms, 1Hz, Duty cycle 1%) | ||||||
| Optical Peak Power | Po | IF =18A | 75 | W | ||
| Forward Current | IF | 18 | A | |||
| Laser Forward Voltage | VF | IF =18A | 13.6 | V | ||
| Pulse Mode (100ms, 1Hz, Duty cycle 10%) | ||||||
| Optical Peak Power | Po | IF =12A | 50 | W | ||
| Forward Current | IF | IF =12.5A | 12.5 | A | ||
| Laser Forward Voltage | VF | 12 | V | |||
| Illuminance area | - | @15mm | 0.72 | cm2 | ||
| Energy density | - | 1Hz, IF =12.5A | 6.75 | J/cm2 | ||
| Wavelength shift | ∂λP/∂T | IF =12.5A | 0.07 | nm/°C | ||
| Soldering Temperature | - | 260(10s) | ℃ | |||
| Substrate | AlN, Cu | |||||
