Features
860nm Multimode VCSE
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Easy to collimate
Applications
•3D Imaging
•Gesture Recognition
•Laser Illumincation
•Medical applications
•Broadband acesss nework
•Pump
Ⅰ. Absolute maximum ratings
Parameter | Symbol | Rating | Unit |
Case Operating Temp | Top | -20 to 85 | ℃ |
Storage Temp | Tsto | -40 to 105 | ℃ |
Reflow Soldering Temperature | Tsdr | 260℃(<5s) | ℃ |
Reverse Voltage | Vr | <5 | V |
Maximum Continuous Current | Imax | <0.4 | A |
ESD exposure(Human body) model | ESD | 1K | V |
Ⅱ. Optical-electrical characteristics @25℃
Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
Optical Power | If=350 mA | Po | mW | - | 200 | - |
Threshold Current | - | Ith | mA | - | 50 | - |
Forward Current | - | - | mA | - | 350 | - |
Power conversion efficiency | - | η | % | - | 24 | - |
Slope efficiency | - | - | W/A | - | 0.67 | - |
Emission Area | - | - | um | - | 226×215 | - |
Peak Wavelength | Po=200 mW | - | nm | 840 | 850 | 860 |
Laser Forward Voltage | If=350 mA | Vf | V | 2.30 | 2.40 | 2.50 |
Series Resistance | If=350 mA | R | Ω | 6.57 | 6.86 | 7.14 |
Original Beam Angle | If=350 mA | - | Degrees | - | 20 | 25 |
Wavelength Temp. drift | If=350 mA | - | nm/℃ | - | 0.07 | - |
Soldering Temperature | - | - | ℃ | - | - | 260(5s) |
Substrate | ALN(3535)/Cu(TO18) |