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850nm 200mW VCSEL Laser Diode
  • 850nm 200mW VCSEL Laser Diode
  • 850nm 200mW VCSEL Laser Diode

850nm 200mW VCSEL Laser Diode

    Features

    • 860nm Multimode VCSE

    • Low wavelength drift

    • Oxide isolation technology

    • Low threshold current

    • High reliability

    • Easy to collimate


Applications

•3D Imaging
•Gesture Recognition
•Laser Illumincation
•Medical applications
•Broadband acesss nework
•Pump 


Ⅰ. Absolute maximum ratings

ParameterSymbolRatingUnit
Case Operating TempTop-20 to 85
Storage TempTsto-40 to 105
Reflow Soldering TemperatureTsdr260℃(<5s)
Reverse VoltageVr<5V
Maximum Continuous CurrentImax<0.4A
ESD exposure(Human body) modelESD1KV


Ⅱ. Optical-electrical characteristics @25℃

ParametersConditionsSymbolUnitMin.Typ.Max.
Optical PowerIf=350 mAPomW-200-
Threshold Current-IthmA-50-
Forward Current--mA-350-
Power conversion efficiency-η%-24-
Slope efficiency--W/A-0.67-
Emission Area--um-226×215-
Peak WavelengthPo=200 mW-nm840850860
Laser Forward VoltageIf=350 mAVfV2.302.402.50
Series ResistanceIf=350 mARΩ6.576.867.14
Original Beam AngleIf=350 mA-Degrees-2025
Wavelength Temp. driftIf=350 mA-nm/℃-0.07-
Soldering Temperature----260(5s)
SubstrateALN(3535)/Cu(TO18)



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