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850nm 4mW VCSEL Laser Diode TO46
  • 850nm 4mW VCSEL Laser Diode TO46

850nm 4mW VCSEL Laser Diode TO46

    Multimode VCSEL

    Low wavelength drift

    Oxide isolation technology

    Low threshold current

    High reliability

    Easy to collimate


850nm 4mW VCSEL Laser Diode TO46


Features:

Multimode VCSEL

Low wavelength drift

Oxide isolation technology

Low threshold current

High reliability

Easy to collimate


Applications:

3D sensors

Lidars

IR illuminations

Proximity sensors

Military applications

Medical applications


Absolute maximum ratings


ParameterSymbolRatingUnit
Case Operating TempTop-20 to 85
Storage TempTsto-40 to 105
Reflow Soldering TemperatureTsdr260℃(<5s)
Reverse VoltageVr5V
Maximum Continuous CurrentImax10mA
ESD exposure (Human body) modelESD1kV


Optical-electrical characteristics @25℃



ParametersConditionsSymbolUnitMin.Typ.Max.
Optical PowerIF=7.1 mAPomW
4
Threshold Current-ITHmA
0.1
Forward Current--
mA
7.1
Power Conversion Efficiency-η%
24
Slope Efficiency--mW/mA
0.58
Die Size--um
172×111
Peak WavelengthPo=4 mW-nm840850860
Laser Forward VoltageIF=7.1 mAVFV
2.3
Series ResistanceIF=7.1 mARΩ
32.4


Beam AngleIF=7.1 mA-Degrees
20
Wavelength Temp. DriftIF=7.1 mA-nm/℃
0.07
Soldering Temperature--
-260(5s)
SubstrateCu/Ag



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