Bit data rate more than 6Gbps
Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
850nm 6Gbps VCSEL Laser Diode
Features
Bit data rate more than 6Gbps
Multimode VCSEL
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Applications
6Gbps data transmission
Optical USB
Active Optical Cable(AOC)
HDMI
Sensing applications
Absolute maximum ratings
| Parameter | Rating |
| Storage Temperature | -40 to 105℃ |
| Case Operating Temperature | -20 to 85℃ |
Reflow Soldering Temperature | 260℃(<5s) |
Reverse Voltage | 5V |
Maximum Continuous Current | 10mA |
| ESD Exposure(Human Body Model) | 1000V |
Optical-electrical characteristics @25℃
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | |
| Optical Power | IF=5 mA | Po | mW | 2.7 | ||
| Threshold Current | ITH | mA | 0.4 | |||
| Forward Current | mA | 5 | ||||
| Slope Efficiency | mW/mA | 0.58 | ||||
| Fall Time (20~80%) | ps | 133 | 136 | |||
| Rise Time (20~80%) | ps | 126 | 127 | |||
| Die Size | um | 172×111 | ||||
| Peak Wavelength | Po=2.7 mW | nm | 840 | 850 | 860 | |
| Laser Forward Voltage | IF=5 mA | VF | V | 2.1 | ||
| Series Resistance | IF=5 mA | R | Ω | 87.5 | ||
| Beam Angle | IF=5 mA | Degrees | 30 | |||
| Wavelength Temp. Drift | IF=5 mA | nm/℃ | 0.07 | |||
| Soldering Temperature | ℃ | 260(5s) | ||||
| Substrate | Cu/Ag | |||||
