850nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
850nm 8mW VCSEL Laser Diode TO46 and 2016 package
Features:
850nm single wavelength
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Applications:
Proximity sensors
Consumer electronics
Active optical cables
Medical applications
Range finder sensors
Modulation and width >2Ghz
Absolute maximum ratings:
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 70 | ℃ |
| Storage Temp | Tsto | -40 to 85 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(<10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 20 | mA |
| ESD exposure (Human body) model | ESD | 2k | V |
Optical-electrical characteristics @25℃
| Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
| Optical Power | IF=11.2mA | Po | mW | 8 | 10 | |
| Threshold Current | - | ITH | mA | 0.5 | ||
| Forward Current | - | - | mA | 2.7 | ||
| Power Conversion Efficiency | - | η | % | 27.5 | ||
| Slope Efficiency | - | - | mW/mA | 0.6 | ||
| Peak Wavelength | Po=8 mW | - | nm | 840 | 850 | 860 |
| Laser Forward Voltage | IF=11.2 mA | VF | V | 2.3 | 2.7 | |
| Series Resistance | IF=11.2 mA | R | Ω | 60 | ||
| Emission area | um | Φ10 | ||||
| Beam Angle | IF=11.2 mA | - | Degrees | 25 | ||
| Wavelength Temp. Drift | IF=11.2 mA | - | nm/℃ | 0.07 | ||
| Soldering Temperature | - | - | ℃ | - | 260(10s) | |
| Substrate | AlN, Cu/Ag, FeNi Alloy | |||||
