940nm single wavelength
Low wavelength drift
Compactness
Low threshold current
High reliability
Collimated Beam<10mrad
940nm 8mW VCSEL Laser Diode
Features:
940nm single wavelength
Low wavelength drift
Compactness
Low threshold current
High reliability
Collimated Beam<10mrad
Applications:
Sensing i.e. Proximity
Vehicle applications
IR indicator
Medical applications
Range finder sensors
Modulation and width >2GHz
Absolute maximum ratings:
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -20 to 60 | ℃ |
| Storage Temp | Tsto | -40 to 85 | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 15 | mA |
| ESD exposure (Human body) model | ESD | 2K | V |
Optical-electrical characteristics @25℃:
| Parameters | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Optical Power Output | Po | IF =12mA | - | 8 | 10 | mW |
| Threshold Current | ITH | - | - | 1.2 | - | mA |
| Slope Efficiency | η | Po =8mW | - | 0.65 | - | mW/mA |
| Power Conversion Efficiency | PCE | IF =12mA | - | 26.5 | 27.4 | % |
| Peak Wavelength | λP | IF =12mA | 930 | 940 | 950 | nm |
| Laser Forward Voltage | VF | IF =12mA | 2.1 | 2.2 | 2.3 | V |
| Series Resistance | RS | IF =12mA | 62 | - | Ohm | |
Beam Angle (collimated with lens) | θ | IF =12mA | <10mrad | - | rad | |
| Wavelength shift | ∂λP/∂T | IF =12mA | - | 0.07 | nm/°C | |
| substrate | AlN | |||||
