808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
808nm 600mW VCSEL Diode
Features
808nm single longitudinal mode
Low wavelength drift
Oxide isolation technology
Low threshold current
Small emission area
Easy to collimate
Application
3D sensors
Lidars
IR illuminations
Medical application
Proximity sensor
Range Finder Sensor
Solid state pump source
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Case Operating Temp | Top | -40 to 85 | ℃ |
| Storage Temp | Tsto | -40 to 105 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Pulsed Current | Imax | 2.2 | A |
| ESD exposure (Human body) model | ESD | 8k-10k (Class 3) | V |
| ESD exposure (Machine) Model | ESD | 800-1000 (Class C) | V |
Optical-electrical characteristics @25℃, CW mode
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Optical Power Output | Po | IF=1A | - | 0.6 | 0.7 | W |
| Threshold Current | Ith | - | - | 0.4 | - | A |
| Forward Current | - | - | - | 1 | - | A |
| Slope Efficiency | - | - | - | 0.86 | - | W/A |
| Power Conversion Efficiency | η | - | - | 27 | - | % |
| Peak Wavelength | λP | Po=0.6W | 800 | 808 | 816 | nm |
| Laser Forward Voltage | VF | IF=1A | - | 2.26 | - | V |
| Series Resistance | RS | IF=1A | - | 0.58 | - | Ω |
| Emission area | - | - | - | 470x470 | - | μm2 |
| Beam Angle (1/e^2) | θ | IF=1A | - | 25 | - | degrees |
| Beam Angle FWHM | θ | IF=1A | - | 20 | - | degrees |
| Wavelength Temp. Drift | ∂λP/∂T | IF=1A | - | 0.07 | - | nm/℃ |
| Pulse Mode (0.1ms, 100Hz, Duty cycle 1%) | ||||||
| Peak Optical Power | Po | IF =1.75A | - | 1.3 | - | W |
| Forward Current | IF | - | - | 1.75 | - | A |
| Slope Efficiency | - | - | - | 1.02 | - | W/A |
| Laser Forward Voltage | VF | IF =1.75A | - | 2.82 | - | V |
| Power Conversion Efficiency | η | IF =1.75A | - | 27 | - | % |
| Series Resistance | RS | IF =1.75A | - | 0.58 | - | Ω |
| Soldering Temperature | - | AlN | - | - | 260(10s) | ℃ |
| Substrate | AlN, CuAg | |||||
