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850nm 5W VCSEL Diode
  • 850nm 5W VCSEL Diode

850nm 5W VCSEL Diode

    850nm wavelength

    Low wavelength drift

    Oxide isolation technology

    Low threshold current

    High reliability

    Easy to collimate


Features

850nm wavelength

Low wavelength drift

Oxide isolation technology

Low threshold current

High reliability

Easy to collimate


Applications

3D sensors

Lidars

IR illuminations

Medical applications

Machining vision

 

Absolute maximum ratings

ParameterSymbolRatingUnit
Case Operating TempTop-40 to 85
Storage TempTsto-40 to 105
Reflow Soldering TemperatureTsdr260℃(10s)
Reverse VoltageVr5V
Maximum Pulsed CurrentImax11A
ESD exposure (Human body model)ESD8-10K (Class 3)V
ESD exposure (Mechanis model)ESD800-1000 (Class C)V


Optical-electrical characteristics @25℃, Pulse width 0.1ms, Duty Cycle 1%

ParametersSymbolConditionsMin.Typ.Max.Unit
Optical Power OutputPoIF=5.7A
5.0
W
Threshold CurrentIth-
0.58
A
Forward Current--
5.7
A
Slope Efficiency--
0.98
W/A
Power Conversion Efficiencyη-
36
%
Peak Wavelength-Po=5W840850860nm
Laser Forward VoltageVFIF=5.7A
2.47
V
Series ResistanceRIF=5.7A
0.136
Ω
Emission area--
990*970
um
Beam Angle (1/e^2)-IF=5.7A
23
Degrees
Beam Angle FWHM--
18
Degrees
Wavelength Temp. Drift-IF=5.7A
0.07
nm/℃
Soldering Temperature--

260(10s)
SubstrateAlN, Cu



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