Single wavelength
High sensitivity photodiode withcoated bandpass filter
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
940nm 8mW VCSEL Laser Diode With Photodiode,consists of two chips, one VCSEL and one photodiode chip, incorporated into in 2216 package (Al2O3) and 3030 package (Cu/Ag).
Features:
Single wavelength
High sensitivity photodiode withcoated bandpass filter
Low wavelength drift
Oxide isolation technology
Low threshold current
High reliability
Applications:
Proximity sensors
Lidars
Laser Curtain
Particulate matter sensors
Medical applications
Laser distance meter
Axial optical cables
Temperature measurement
Absolute maximum ratings:
| Parameter | Symbol | Rating | Unit |
| Case Operating Temperature | Top | -25 to 60 | ℃ |
| Storage Temperature | Tsto | -40 to 85 | ℃ |
| Reflow Soldering Temperature | Tsdr | 260℃(10s) | ℃ |
| Reverse Voltage | Vr | 5 | V |
| Maximum Continuous Current | Imax | 20 | mA |
| ESD exposure (Human body) model | ESD | 2k | V |
Optical-electrical characteristics:
| Parameters | Symbol | Conditions | Min. | Typ. | Max. | Units |
| @25℃ CW mode | ||||||
| Optical Power Output | Po | IF =12mA | 8 | 10 | mA | |
| Threshold Current | ITH | 12 | mA | |||
| Slope Efficiency | η | Po =8mW | 0.74 | mW/mA | ||
Power Conversion Efficiency | PCE | IF =12mA | 28 | % | ||
| Peak Wavelength | λP | IF =12mA | 930 | 940 | 950 | nm |
| Laser Forward Voltage | VF | IF =12mA | 2.4 | V | ||
| Series Resistance | RS | IF =12mA | 48 | Ω | ||
| Emission area | 36X31 | um | ||||
| Beam angle(1/e^2) | IF =12mA | 27 | Degree | |||
| Wavelength shift | IF =12mA | 0.07 | nm/°C | |||
| Soldering temperature | 260(10s) | ℃ | ||||
| Photodiode | ||||||
| Forward Voltage | VF | IF=10mA， Ee=0mW/cm2 | 1.2 | V | ||
Reverse Breakdown Voltage | VBR | IBR=10uA， Ee=0mW/cm2 | 33 | V | ||
| Reverse Dark Current | ID | VR=10V, Ee=0mW/cm2 | 5 | nA | ||
| Responsivity | IL | VR=3V, @940nm | 0.6 | A/W | ||
| Peak Sensing Wavelength | λp | VR=3V | 940 | nm | ||
| Total Capacitance | CJ | VR=5V, F=1MHz | 1.1 | Pf | ||
| Substrate | Al2O3, Cu/Ag | |||||
